2003. 2. 24 1/2 semiconductor technical data KDR377 schottky barrier type diode revision no : 3 low voltage high speed switching. features low forward voltage : v f(2) =0.43v (typ.) small package : usc. maximum rating (ta=25 ) usc dim millimeters a b c d e f g h j k 2.50 0.1 1.25 0.05 0.90 0.05 0.30+0.06/-0.04 1.70 0.05 min 0.17 0.126 0.03 0~0.1 0.15 0.05 0.4 0.05 2 +4/-2 l m 4~6 i 1.0 max cathode mark m m i c j g d 2 1 b 1. anode 2. cathode e k a f h l + _ + _ + _ + _ + _ + _ + _ electrical characteristics (ta=25 ) characteristic symbol rating unit maximum (peak) reverse voltage v rm 40 v reverse voltage v r 40 v maximum (peak) forward current i fm 150 ma average forward current i o 30 ma surge current (10ms) i fsm 200 ma power dissipation p d 200* mw junction temperature t j 125 storage temperature range t stg -55 125 * : mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm. type name marking v u characteristic symbol test condition min. typ. max. unit forward voltage v f(1) i f =1ma - 0.29 0.37 v v f(2) i f =30ma - 0.43 0.55 reverse current i r v r =40v - - 20 a total capacitance c t v r =1v, f=1mhz - 6.0 - pf
2003. 2. 24 2/2 KDR377 revision no : 3 reverse voltage v (v) r c - v t terminal capacitance c (pf) tr 0 1 3 5 10 30 50 ta=25 c i - v f f f forward voltage v (v) 0 10 f forward current i (ua) 0.2 2 ta=25 c 0.4 0.6 0.8 1 10 10 3 10 4 10 5 10 6 i - v r reverse voltage v (v) 010 r reverse current i ( a) rr 10 2 10 3 10 20 30 40 50 60 10 20 30 40 ta=25 c f=1mhz
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